2sa1291 / 2sc3255 no.1201-1/4 applications ? various inductance lamp drivers for electrical equipment. ? inverters, converters (flash, fluorescent lamp lighting circuit). ? power amp (high power car stereo, motor controller). ? high-speed switching (switching regulator, driver). features ? low saturation voltage. ? excellent current dependence of h fe . ? short switching time. specifications ( ) : 2sa1291 absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit collector-to-base voltage v cbo (--)80 v collector-to-emitter voltage v ceo (--)60 v emitter-to-base voltage v ebo (--)5 v collector current i c (--)10 a collector current (pulse) i cp (--)12 a collector dissipation p c 1.75 w tc=25 c40w junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit collector cutoff current i cbo v cb =(--)40v, i e =0a (--)0.1 ma emitter cutoff current i ebo v eb =(--)4v, i c =0a (--)0.1 ma dc current gain h fe v ce =(--)2v, i c =(--)1a 70* 280* continued on next page. * : the 2sa1291/2sc3255 are classified by 1a h fe as follows : rank q r s h fe 70 to 140 100 to 200 140 to 280 tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : en1201e 83006 ms im tc-00000111 / 72006fa ms im tc-00000018 / 73102tn (kt) / 71598ha (kt) / d251mh / d151mh (koto) any and all sanyo semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo semiconductor representative nearest you before usingany sanyo semiconductor products described or contained herein in such applications. sanyo semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor products described or contained herein. sanyo semiconductors data sheet 2sa1291 / 2sc3255 pnp / npn epitaxial planar silicon transistors 60v / 10a high-speed switching applications
2sa1291 / 2sc3255 no.1201-2/4 continued from preceding page. ratings parameter symbol conditions min typ max unit gain-bandwidth product f t v ce =(--)5v, i c =(--)1a 100 mhz collector-to-emitter saturation voltage v ce (sat) i c =(--)5a, i b =(--)0.25a (--)0.4 v collector-to-base breakdown voltage v (br)cbo i c =(--)1ma, i e =0a (--)80 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (--)60 v emitter-to-base breakdown voltage v (br)ebo i e =(--)1ma, i c =0a (--)5 v turn-on time t on see specified test circuit. 0.1 m s storage time t stg see specified test circuit. 0.5 m s fall time t f see specified test circuit. 0.1 m s package dimensions switching time test circuit unit : mm (typ) 7507-001 i c -- v be i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- a base-to-emitter voltage, v be -- v collector current, i c -- a itr03195 -- 0.2 -- 0.4 -- 0.6 -- 0.8 -- 1.0 -- 1.2 0 0 -- 2 -- 4 -- 6 -- 8 -- 10 -- 12 itr03196 1.0 1.2 0.6 0.8 0.2 0.4 0 0 2 4 6 8 10 12 2sa1291 v ce = --2v 2sc3255 v ce =2v ta=120 c 25 c --40 c ta=120 c 25 c --40 c 10.2 5.1 4.5 1.3 15.1 14.0 2.7 6.3 3.6 18.0 (5.6) 2.7 1.2 0.8 0.4 2.55 2.55 123 1 : base 2 : collector 3 : emitter sanyo : to-220 pw=20 m s d.c. 1% input v cc =20v 50 w r b 4 w i b1 i b2 100 m f 470 m f v be = --5v v r + + r l output 20i b1 = --20i b2 =i c =5a for pnp, the polarity is reversed.
2sa1291 / 2sc3255 no.1201-3/4 h fe -- i c h fe -- i c f t -- i c f t -- i c collector current, i c -- a dc current gain, h fe collector current, i c -- a dc current gain, h fe collector current, i c -- a gain-bandwidth product, f t -- mhz collector current, i c -- a gain-bandwidth product, f t -- mhz v ce (sat) -- i c v ce (sat) -- i c collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- v collector-to-emitter saturation voltage, v ce (sat) -- v collector current, i c -- a a s o collector-to-emitter voltage, v ce -- v collector current, i c -- a a s o collector-to-emitter voltage, v ce -- v collector current, i c -- a itr03201 57 -- 0.1 7 -- 1.0 2 -- 0.01 23 357 -- 10 22 35 57 0.1 7 1.0 2 0.01 23 357 10 22 35 -- 0.1 -- 0.01 3 5 2 -- 1.0 3 5 2 -- 10 3 5 2 0.1 0.01 3 5 2 1.0 3 5 2 10 3 5 2 2sa1291 i c / i b = 20 2sa1291 itr03202 2sc3255 i c / i b = 20 2sc3255 itr03203 dc operation 10ms 100ms -- 10 5 7 2 3 5 3 5 -- 100 7 2 2 35 7 35 -- 0.1 7 7 2 2 -- 1.0 -- 10 i cp = --12a i c = --10a 1ms itr03204 dc operation 10ms 100ms 10 5 7 2 3 5 3 5 100 7 2 2 35 7 35 0.1 7 7 2 2 1.0 10 i cp =12a i c =10a 1ms 2sa1291 v ce = --5v -- 0.01 -- 0.1 23 3 57 -- 1.0 7 -- 10 5 237 5 22 7 10 5 7 100 5 3 2 2 itr03199 2sc3255 v ce =5v 0.01 0.1 23 3 57 1.0 23 5 7 10 7 5 2 7 10 5 7 100 5 3 2 2 itr03200 2sa1291 v ce = --2v 2sc3255 v ce =2v 1000 100 10 itr03197 2 3 57 2 3 57 22 33 57 -- 0.01 -- 0.1 -- 1.0 -- 10 2 3 5 7 2 3 5 7 0.01 0.1 1.0 23 57 23 57 10 7 22 33 5 7 100 10 5 7 1000 5 3 2 3 2 itr03198 ta=120 c 25 c --40 c ta=120 c 25 c --40 c tc=25 c single pulse tc=25 c single pulse
2sa1291 / 2sc3255 no.1201-4/4 ps 0 20 40 60 80 100 120 140 160 0 0.5 1.75 1.0 1.5 2.0 itr03205 0 20 40 60 80 100 120 140 160 0 10 20 30 40 50 itr03206 p c -- ta no heat sink ambient temperature, ta -- c collector dissipation, p c -- w p c -- tc case temperature, tc -- c collector dissipation, p c -- w 2sa1291 / 2sc3255 2sa1291 / 2sc3255 specifications of any and all sanyo semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo semiconductor co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo semiconductor co., ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. sanyo semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of august, 2006. specifications and information herein are subject to change without notice.
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